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| SMD Type MOS Field Effect Transistor 2SK3402 TO-252 IC MOSFET Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low on-resistance +0.2 9.70-0.2 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Low Ciss : Ciss = 3200 pF TYP. +0.15 0.50-0.15 RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 18A) 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 60 20 36 144 40 1.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD ID =36A, VDD = 48 V, VGS = 10 V ID=18A,VGS(on)=10V,RG=10 ,VDD=30V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=18A VGS=10V,ID=18A VGS=4.0V,ID=18A 1.5 13 2.0 27 12 15 3200 520 270 36 310 170 180 61 8.2 17 15 22 Min Typ Max 10 10 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC 3.80 RDS(on)1 =15 m MAX. (VGS = 10 V, ID = 18A) +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 www.kexin.com.cn 1 |
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